What will be the result on increase of applied voltage but below the depletion barrier in a reverse biased diode?

When the applied voltage is increased in a reverse-biased diode but remains below the depletion barrier, the width of the depletion region will increase, leading to a higher electric field across the junction. This results in a minimal increase in the reverse current, primarily due to the thermal generation of minority carriers. However, the diode will not conduct significantly until the breakdown voltage is reached, at which point a rapid increase in current occurs.