What is the value of the transition capacitance for a silicon diode when VD 0?

The transition capacitance of a silicon diode, often referred to as junction capacitance, depends on the applied voltage across the diode. When the diode is reverse-biased (VD < 0), the transition capacitance is positive and becomes larger as the reverse voltage increases. However, when VD = 0, the transition capacitance is at its minimum value, which can be approximated using the formula (C_j = \frac{\epsilon A}{W}), where (W) is the depletion width, (A) is the junction area, and (\epsilon) is the permittivity of the semiconductor material. At VD = 0, the depletion region is narrow, resulting in a relatively small capacitance.