A bipolar junction transistor (BJT) experiences forced current gain when it operates in the active region, particularly under conditions of high base current. In this region, the transistor can amplify the input current, allowing a small base current to control a much larger collector current. This condition is essential for applications such as amplification and switching in electronic circuits. The forced current gain is typically represented by the current gain factor (β or h_FE) of the BJT.
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