It will make more sense if you first study the construction of MOSFET. It has three terminals, Gate (G), Source (S), and Drain (D). G is insulated from the S and D. Between S and D is a variable resistor, whose resistance depends on the voltage applied across G and S. Since SD is basically a resistor, you have power dissipation when a voltage is applied across S and D. Power dissipation = Vds * Ids.
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