Any variation of the charge within a p-n diode with an applied voltage variation yields a capacitance wich must be added to the circuit model of a p-n diode. The capacitance associated with the charge variation in the depletion layer is called the junction capacitance, while the capacitance associated with the excess carriers in the quasi-neutral region is called the diffusion capacitance. Both types of capacitances are non-linear so that we will derive the small-signal capacitance in each case. We will find that the junction capacitance dominates for reverse-biased diodes, while the diffusion capacitance dominates in strongly forward-biased diodes. The total capacitance is the sum of both.
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